AlGaAs/GaAs photodetectors for detection of luminescent light from scintillators

The Al x Ga 1-x As / GaAs photosensitive heterostructures were grown by molecular beam epitaxy. On their basis the discrete photodiodes (PD) and phototransistors (PT) operating in the visible (0.4–0.7 μm) wavelength range and having photosensitive area diameters of 1.5 mm and 180 pm correspondingly were created. The current-voltage and spectral characteristics of discrete PD and PT were measured and analyzed. Distinctive features of the proposed photodetectors are a high monochromasy with the maximal sensitivity of 0.13 A/W at λ = 530-570 nm and a low dark current of 4.7 nA and 530 pA at 5 V reverse bias for PD and PT correspondingly.