期刊:Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs [Institute of Electrical and Electronics Engineers] 日期:2002-11-27卷期号:: 159-162被引量:3
标识
DOI:10.1109/ispsd.1998.702659
摘要
A novel power device called the CMOS-thyristor-cascode (CTC), compatible with the conventional BCD-MOS process is presented in this paper. The CTC is a thyristor controlled by a CMOS-like transistor pair and offers 30% lower conduction losses and 3.5 times higher parasitic thyristor latch-up immunity than a lateral IGBT. A CTC with symmetrical structure as a bi-directional switch is also demonstrated.