New spin on carbon materials made from hemicellulose for hardmask layer

Hemicellulose spin on carbon (SOC) material was newly developed for hardmask layer. For next generation lithography, high etching selectivity is strongly required. However, there is an issue of a balance of cost and etching selectivity in conventional process. Hemicellulose spin on carbon material is able to overcome this issue by virtue of its chemical structure and newly-developed reactive hemicellulose hardening (R2H). R2H means that hemicellulose unit is selectively hardened by chemical reaction. In this study, deep L/S and hole patterns were fabricated by using hemicellulose SOC with R2H and its dry etching selectivity was 26. Additionally, compatibility with EUV lithography was confirmed. Favorable pattern made of resist for EUV lithography was obtained on Hemicellulose SOC and successfully transferred into hemicellulose SOC.