InGaZnO thin-film transistors with back channel modification by organic self-assembled monolayers

InGaZnO (IGZO) thin-film transistors (TFTs) with back channel modified by different kinds of self-assembled monolayers (SAMs) were fabricated. The mobility and electrical stability of the IGZO-TFTs were greatly improved after SAM-modification, owing to the good interface coupling and less water adsorption-desorption effect on the IGZO surface. Meanwhile, the octadecyltriethoxysilane (OTES) treated IGZO-TFT exhibited a higher mobility of 26.6 cm2 V−1 s−1 and better electrical stability compared to the octadecanethiol (ODT) treated one, which was attributed to the formation of a more compact and steady SAM on the IGZO surface after OTES treatment.