Growth of thick GaN layers by hydride vapor‐phase epitaxy

The hydride vapor-phase epitaxy method, useful for growing thick layers, and the epitaxial lateral-overgrowth (ELO) method, useful for reducing the number of dislocations that occur in heteroepitaxy, have been combined to grow thick GaN layers with a low dislocation density (∼ 107 cm−2). A mechanism that reduces the dislocation density was recently found; it is accompanied by facet formation at the beginning of ELO. Using these GaN layers as a substrate, InGaN MQW structures were grown. A substrate with a low dislocation density was found to improve the optical quality of these structures. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(7): 57–63, 1998.