钝化
材料科学
发光二极管
退火(玻璃)
光电子学
等离子体
二极管
热的
复合材料
图层(电子)
物理
量子力学
气象学
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2009-10-22
卷期号:27 (6): 2337-2341
被引量:68
摘要
The effects of thermal annealing and wet chemical treatments on the electrical characteristics of GaN-based light emitting diodes (LEDs) integrated with a microhole array were studied. It was found that KOH can etch off the plasma-damaged materials, leading to a complete suppression of surface leakage currents. It, however, attacked metal contacts and compromised the forward turn-on characteristics. Thermal annealing removed damage in the near-surface bulk region, whereas (NH4)2S treatment only passivated surface states. Both methods produced a partial recovery of the electrical characteristics of the perforated LEDs. It has been found that a complete removal of plasma damage in the perforated LEDs can be realized by thermal annealing used in conjunction with sulfide passivation.
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