电容器
材料科学
电介质
金属绝缘体金属
电容
退火(玻璃)
高-κ电介质
原子层沉积
光电子学
异质结
薄膜
堆栈(抽象数据类型)
绝缘体(电)
泄漏(经济)
电极
纳米技术
复合材料
电气工程
电压
化学
宏观经济学
物理化学
经济
工程类
程序设计语言
计算机科学
作者
Mindaugas Lukosius,Christian Wenger,Tom Blomberg,G. Ruhl
摘要
The possibilities to grow thin films of SrTiO3 and Al2O3 by atomic layer deposition for stacked metal–insulator–metal capacitors have been investigated in this work. In order to tune the functional properties of the capacitors, different processing steps have been employed to realize different combinations of the dielectric stacks. Electrical properties, extracted after the postdeposition annealing and sputter deposition of the Au top electrodes, indicated that the metal–insulator–metal (MIM) structures with additional Al2O3 layer provided better leakage currents densities, compared to the ones with single SrTiO3 based MIM capacitors, but the dielectric constant values have also decreased if additional Al2O3 film was inserted. Attempts to optimize the properties of the MIM stacks have been done by manufacturing heterostructures of Al2O3/SrTiO3/Al2O3 as well as SrTiO3/Al2O3/SrTiO3. In the first case, Al2O3 prevented the crystallization of SrTiO3 in the multilayer dielectric structure and therefore reduced the total capacitance density of the particular MIM stack, whereas the SrTiO3/Al2O3/SrTiO3 stack was found to possess superior electrical properties. Leakage current density as low as ∼10−8 A/cm2 at 2 V and the dielectric constant value of 40 have been extracted.
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