发光二极管
钙钛矿(结构)
互连
材料科学
光电子学
二极管
串联
堆积
量子效率
亮度
可扩展性
电压
量子点
计算机科学
PIN二极管
图层(电子)
共发射极
电压降
氧化物
作者
Feiyun Zhao,Haifeng Zhao,Zhennan Tian,Aobo Ren,Lechuan Chen,Hengyu Liu,Jun Wu,Jun Wu,Kai Shen,Wuyang Ren,Chuang Li,Chunyang Yin,Junsheng Yu,Feng Gao,Sai Bai,Jiang Wu,Jiang Wu,Yanrong Li
标识
DOI:10.1038/s41467-026-75756-5
摘要
Abstract Tandem light-emitting diodes (LEDs) offer advantages in efficiency, brightness and lower the current density for a target brightness, but their implementation in solution-processed perovskite LEDs is limited by interconnection strategies that introduce high voltage penalties and poor robustness. Here we demonstrate a hierarchically structured interconnection layer (ICL) integrating a near-degenerate charge-generation junction with a crystalline-amorphous oxide composite, enabling low-barrier transport and solvent-tolerant stacking with reduced loss. Using this ICL, we realize double-junction perovskite LEDs in which two subunits operate efficiently in series, achieving a peak external quantum efficiency (EQE) of 42.6%, a maximum radiance of 690 W sr −1 m −2 , and low driving voltage. The ICL is compatible with multiple perovskite emitters and supports scalable multijunction integration, yielding multijunction devices with sub-bandgap turn-on voltages and high EQEs exceeding 60%. Our results establish a low-loss interconnection strategy for series-stacked perovskite emitters, providing a practical route toward high-brightness and multi-wavelength perovskite light sources.
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