Low Energy Implantation for Medium Current Implanter with Molecular Ions

Ion implantation is now indispensable process for semiconductor device fabrication. One of the key issues for the next generation LSI device fabrication is the formation of ultra shallow junction using Boron implantation. Medium current ion implanter for LSI production use can dope ions to the device wafer with accurately controlled uniformity and incident angle at a variety of energy ranges. However, the productivity of LSI at sub‐keV energy region with conventional atomic B+ implantation will quickly fall down due to the low beam current caused by the well‐known space charge limitation. To achieve a high productivity in this energy region, Decaborane (B10Hx+) implantation is supposed to be an appropriate solution. We are to review the technologies used for the commercial medium current ion implanter including Decaborane implantation for ultra shallow junction formation.