Radiation effects in GaInP/GaAs/Ge triple junction solar cells irradiated by 1 MeV and 10 MeV electrons

The experiments of the GaInP/GaAs/Ge triple junction solar cells (3JSCs) irradiated by 1MeV and 10 MeV electrons at the electron accelerator facility were presented. The radiation effects on the GaInP/GaAs/Ge 3JSCs induced by different energy electrons at high fluence up to 5 × 1016 e/cm 2 were investigated. The I–V curves degraded with the increasing electron fluence were presented. The degradations of the radiation sensitive parameters such as the open-circuit voltage (Voc), the short-circuit current (Isc), the maximum power (Pmax), and the external quantum efficiency versus electron fluence were analyzed. The degradations of the Voc, Isc, and Pmax induced by 1MeV and 10 MeV electrons were compared. The annealing tests after electron irradiation about 3 months show no obvious recovery. The degradation mechanisms of the radiation sensitive parameters are also demonstrated.