材料科学
超晶格
位错
蓝宝石
应力松弛
化学气相沉积
基质(水族馆)
金属有机气相外延
Crystal(编程语言)
光电子学
外延
单晶
结晶学
复合材料
光学
蠕动
化学
物理
地质学
海洋学
程序设计语言
激光器
图层(电子)
计算机科学
作者
Bin Tang,Zehong Wan,Hongpo Hu,Liyan Gong,Shengjun Zhou
摘要
We report the metal-organic chemical vapor deposition growth of high-quality AlN on sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the insertion of an alternating V/III ratio AlN superlattice facilitates the relaxation of tensile stress during growth and assists the annihilation of threading dislocations. Dislocation inclination was proposed to play a major role in the stress relaxation and dislocation reduction, which not only provides an effective misfit-dislocation component but also increases the dislocation reaction probability. By this method, crack-free 3.25 μm-thick AlN films were grown on flat sapphire substrate (FSS) and nano-patterned sapphire substrate (NPSS) at 1180 °C, and the full width at half maximum of (002)/(102) rocking curves was 204/408 and 152/323 arcsec for such AlN/FSS and AlN/NPSS templates.
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