Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET

InGaAs planar TFETs with 70% In content are fabricated and characterized. The increase of the In content of the 8 nm channel from 53% to 70% is found to significantly boost the performance of the device. Record performance Ion=4 μA/μm at If = 100 μA/μm, Vdd=0.5V and Vd=0.3 V with minimum sub-threshold swing (SSmm) of 60 mV/dec at 300K is obtained for a homo-junction InGaAs device. Reliability assessment shows that the TFET SS and transconductance (gm) are more immune to PBTI stress than its equivalent MOSFET device.