Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

We have simultaneously determined the carrier concentration, mobility, and thickness of 4H–SiC homoepilayers with carrier concentrations of 1017–1018 cm-3 from infrared reflectance measurements with the wave number range of 80–2000 cm-1. A modified classical dielectric function model was employed for the fitting analyses. We have prepared n-type epilayers on p-type and n-type substrates for comparison with the values of the carrier concentration and mobility estimated from infrared reflectance measurements with those obtained from Hall-effect measurements and C–V measurements. Through these comparisons, we have confirmed the validity of the values estimated from infrared reflectance measurements.