变阻器
俘获
瞬态(计算机编程)
过电压
肖特基二极管
材料科学
肖特基势垒
电压
光电子学
瞬态电压抑制器
非线性系统
电荷(物理)
热传导
机械
电气工程
物理
二极管
复合材料
计算机科学
生物
操作系统
工程类
量子力学
生态学
作者
Zhuolin Cheng,Zongke Hou,Tong Wu,Yao Wang,Rou Li,Ying Lin,Jianying Li,Shengtao Li,Kangning Wu
摘要
ZnO varistors are widely employed for overvoltage protections and surge absorptions due to their excellent nonlinear current–voltage characteristics originating from double Schottky barriers (DSBs). In most cases, they are operating under moderate ac voltages, while calculating the transient current responses of DSBs remains a challenge, impeding the development of condition assessments. In this paper, a transient conducting model for the DSB is proposed by quantifying the charge trapping processes of the interface states. The DSB is found to quickly reach a quasi-steady state, where the interfacial charge stabilizes with only small modulations at a relatively high level above the dc equilibrium value, even though the applied ac voltage varies in time and polarity. This is the result of efficient charge trapping and slow de-trapping by grain boundary interface states. For charge compensation under the time-varying voltage, the width of the two depletion regions of the DSB shows periodic changes. The proposed model is validated by a satisfying agreement between experimentally measured current responses and simulation results of ZnO varistors. The findings of this study provide a perspective on investigating the time-varying conducting systems and open avenues for condition assessments of nonlinear conducting devices.
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