材料科学
纳米尺度
半导体
纳米技术
原子单位
接口(物质)
比例(比率)
电子结构
电子材料
点(几何)
工程物理
光电子学
凝聚态物理
物理
复合材料
几何学
数学
量子力学
毛细管数
毛细管作用
标识
DOI:10.1557/s43578-023-01229-w
摘要
Abstract The past 75 years has been an exciting and dynamic time for solid-state electronic materials with advanced micro- and optoelectronic properties but point defects at semiconductor–metal interfaces that limit their operation have been a challenge to understand and control. These defects depend strongly on chemical structure at the intimate interface, and techniques have now developed to learn how their presence at nanoscale dimensions impact electronic structure at the macroscale. A combination of optical, electronic, and microscopic techniques can now enable new directions for defect research of metal–semiconductor interfaces at the nano/atomic scale. These nanoscale and atomic scale techniques can meet the experimental challenges inherent at this scale and create opportunities for new defect research of electronic material interfaces at a deeper level. Graphical Abstract
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