Boosting(机器学习)
变压器
主动噪声控制
电子工程
材料科学
计算机科学
电气工程
物理
声学
工程类
降噪
人工智能
电压
作者
Jiacong Ke,Zetian Lin,Guangyin Feng,Yanjie Wang
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2024-01-12
卷期号:59 (3): 668-676
被引量:13
标识
DOI:10.1109/jssc.2023.3340300
摘要
This article presents a broadband low-noise amplifier (LNA) based on tri-coupled transformer (XFMR) for ${G}_{m}$ boosting and enhanced noise canceling (NC). In contrast to conventional NC structures, the proposed design uses the combination of a single transistor and a tri-coupled XFMR innovatively to achieve noise reduction, ${G}_{m}$ boosting, as well as wideband matching, simultaneously. Fabricated in a 40-nm CMOS process, the LNA achieves a 3-dB bandwidth of 22.1 GHz from 51.6 to 73.7 GHz, a peak gain of 22.4 dB, a minimum NF of 3.8 dB, and an average IP1dB of −12 dBm with a dc power consumption of 34 mW.
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