Microjunction-Modulated Selective Ammonia Sensor with P-Type Oxides-Decorated WS2 Microflakes

In this study, p-type oxides including NiO, Co3O4, and CuO had been heterostructured with WS2 microflakes for chemiresistive-type gas sensors at room temperature. Microjunctions formed between p-type oxides and WS2 microflakes effectively modulated the sensitivities of the sensors to ammonia. In comparison to Co3O4- or CuO-decorated WS2-based sensors in which "deep energy puddles" were formed at the microjunctions between the oxides and WS2, the fabricated NiO/WS2 heterostructure-based sensor without the formed energy puddles exhibited a better sensing performance with improved sensitivity and a faster response to gaseous 1–10 ppm of NH3. It also processes a good selectivity to some volatile organic compounds including HCHO, toluene, CH3OH, C2H5OH, CH3COCH3, and trimethylamine (TMA). The underlying mechanisms for the enhanced responses were examined by employing in situ diffuse reflectance infrared Fourier transform spectroscopy and density functional theory computation. The oxidization of NH3 on NiO/WS2 was much more intensified compared to those occurred on Co3O4/WS2 and CuO/WS2. NiO/WS2 has a stronger adsorption to NH3 and gains more effective charges transferred from NH3 which significantly contributes to the enhanced sensing properties.