材料科学
金属有机气相外延
外延
三联结
能量转换效率
太阳能电池
光电子学
锗
基质(水族馆)
太阳能电池效率
纳米技术
硅
海洋学
地质学
图层(电子)
作者
Malte Klitzke,Jonas Schön,Rosalinda H. van Leest,G.M.M.W. Bissels,Elias Vlieg,Michael Schachtner,Frank Dimroth,David Lackner
标识
DOI:10.1051/epjpv/2022024
摘要
In this work an inverted metamorphic four junction (IMM4J) solar cell with 30.9% conversion efficiency in beginning of life conditions under the AM0 (1367 W/m 2 ) spectrum is presented. Additionally, our newest improved IMM3J cell, consisting of Ga 0.51 In 0.49 P/GaAs/Ga 0.73 In 0.27 As subcells, with 30.6% efficiency is also shown. The IMM4J solar cells consist of Al 0.05 Ga 0.46 In 0.49 P/Al 0.14 Ga 0.86 As/Ga 0.89 In 0.11 As/Ga 0.73 In 0.27 As subcells and are epitaxially grown by metal organic vapor phase epitaxy (MOVPE) on a GaAs substrate. These IMM solar cells achieve power-to-mass ratios of 3 W/g or more, which is more than three times higher than standard germanium based triple or four junction space solar cells. The losses in comparison to the simulated near-term potential efficiency of 33.8% for the IMM4J are analyzed in detail. Furthermore, the irradiation behavior for 1 MeV electron fluences of 1 × 10 14 e − /cm 2 and 2.5 × 10 14 e − /cm 2 for the IMM4J cells was investigated. A roadmap to further develop this concept towards an IMM5J with a realistic begin of life (BOL) efficiency potential of 35.9% under AM0 is presented.
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