记忆电阻器
索马
枝晶(数学)
突触
人工神经网络
材料科学
CMOS芯片
计算机科学
过程(计算)
神经形态工程学
纳米技术
电子工程
人工智能
工程类
神经科学
光电子学
几何学
数学
生物
操作系统
作者
Tingyu Li,Jianshi Tang,Junhao Chen,Xinyi Li,Han Zhao,Yue Xi,Wen Sun,Yijun Li,Qingtian Zhang,Bin Gao,He Qian,Huaqiang Wu
出处
期刊:
日期:2023-06-26
卷期号:: 1-3
被引量:1
标识
DOI:10.1109/cstic58779.2023.10219334
摘要
We report a monolithic three-dimensional integration of dendritic neural network (M3D-DNN) with memristors-based artificial synapse, dendrite and soma on top of Si-based CMOS logic. The Si CMOS layer served as control logic fabricated in foundry. A 1k-bit artificial synaptic array was built with HfO $_{2} -$based nonvolatile memristors to implement computing-in-memory (CIM). In addition, TiO $_{x} -$based memristive artificial dendrite and NbO $_{x} \mathrm{N}_{y} -$based memristive artificial soma were adopted to implement the dendritic neuron (DN) layer to process postsynaptic signals. Both the CIM and DN layers were fabricated using a BEOL-compatible process. The structural integrity and proper function of each layer in the M3D-DNN were verified. Our work demonstrates a promising architecture to efficiently implement bio-plausible artificial neural networks (ANNs).
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