材料科学
石墨烯
结晶度
钙钛矿(结构)
钝化
单层
光致发光
外延
电子迁移率
范德瓦尔斯力
带隙
光电子学
能量转换效率
纳米技术
化学工程
图层(电子)
化学
复合材料
有机化学
分子
工程类
作者
Zhaorui Wen,Chao Liang,Shengwen Li,Gang Wang,Bingchen He,Yiqiang Zhang,Jing Xie,Hui Pan,Zhenhuang Su,Xingyu Gao,Hong Guo,Shi Chen
出处
期刊:Energy & environmental materials
日期:2023-11-01
摘要
Two‐dimensional materials have been widely used to tune the growth and energy‐level alignment of perovskites. However, their incomplete passivation and chaotic usage amounts are not conducive to the preparation of high‐quality perovskite films. Herein, we succeeded in obtaining higher‐quality CsPbBr 3 films by introducing large‐area monolayer graphene as a stable physical overlay on top of TiO 2 substrates. Benefiting from the inert and atomic smooth graphene surface, the CsPbBr 3 film grown on top by the van der Waal epitaxy has higher crystallinity, improved (100) orientation, and an average domain size of up to 1.22 μm. Meanwhile, a strong downward band bending is observed at the graphene/perovskite interface, improving the electron extraction to the electron transport layers (ETL). As a result, perovskite film grown on graphene has lower photoluminescence (PL) intensity, shorter carrier lifetime, and fewer defects. Finally, a photovoltaic device based on epitaxy CsPbBr 3 film is fabricated, exhibiting power conversion efficiency (PCE) of up to 10.64% and stability over 2000 h in the air.
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