A real-time monitoring method of potential-induced degradation shunts for crystalline silicon solar cells

Potential-induced degradation (PID) is a significant factor influencing the reliability of crystalline silicon solar cell modules. In this study, a novel PID test method with a real-time monitor was presented to characterize the PID loss of silicon solar cells. Meanwhile, an equivalent circuit model was established to simulate the PID process and investigate the PID mechanisms. Also, an electric field treatment platform was built to perform PID treatment. Initial I–V curves and electroluminescence images were measured to calculate several essential parameters, such as a PID area factor (Apid/Acell). Then, the degradation ratio of solar cells under high-potential conditions was determined based on the area factor, revealing a strong correlation between the degradation ratio and shunt resistance. Several parameters within an equivalent model were used to calculate the degradation ratio. Subsequently, the degradation ratio calculated from the real-time monitoring method was compared with the power conversion efficiency degradation ratio from the I–V curves, verifying its feasibility and reliability. Additionally, novel PID method proposed in this study significantly reduced the treatment time from 96 to 2 h. The introduction of a real-time monitoring technique for PID testing of solar cells is expected to significantly improve the measurement efficiency of PID and provide novel insight and technical support for in-depth PID research.