抵抗
次级电子
极紫外光刻
极端紫外线
扫描电子显微镜
材料科学
电子
辐照
二次排放
平版印刷术
电子束光刻
电子束处理
光学
光电子学
原子物理学
纳米技术
物理
激光器
复合材料
量子力学
核物理学
图层(电子)
作者
Daisuke Bizen,Fumiya Ishizaka,Makoto Sakakibara,Makoto Suzuki,Natsuki Tsuno,Toshiyuki Yokosuka,Hideyuki Kazumi
摘要
Secondary-electron yield (SEY) and surface charging of various insulating materials under irradiation of primary electrons (PEs) with energy of lower than 100 eV were investigated. Irradiation energy of the PEs with SEY of 1 (E1) for SiO2 and Si3N4 was about 20 eV and that for the resist using in extreme ultraviolet (EUV) lithography was about 40 eV. Additionally, it was found that E1 corresponds to the lower limit for obtaining scanning electron microscope images of the EUV resist pattern. The surface potential of the pattered EUV resist modulated by PE irradiation was estimated by using a retarding-field energy filter. It was found that the surface potential varies with the width and pitch of the EUV resist pattern. The variation of surface potential depends on the width and pitch due to the fact that the secondary electrons emitted from the space of the resist pattern are absorbed in the sidewalls of the resist pattern as it becomes denser.
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