InP and InGaAs grown on InP substrate by molecular beam epitaxy

InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As 2 were compared with the layers grown using As 4 from a Riber standard cracker cell. When As 4 is used, the highest electron mobility of InGaAs is 3960 cm 2 /(V·s) with the V/III ratio of 65. When converted to As 2 , the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm 2 /(V • s) to 5060 cm 2 /(V • s).