Conductivity and Impurity Doping on Single Crystal Diamond

It has been shown that p- and n-type doped diamond films and combinations can be applied for a variety of electronic and optoelectronic applications. To achieve success, a comprehensive knowledge of doping technology and related analysis techniques are required. For p-type doping, the impurity boron is easily incorporated into both natural and synthesized diamond, whereas n-type diamond, which is not present in nature, has been recently developed by phosphorus doping. Progress in p- and n-type doping of diamond semiconductors has stimulated extensive research on the various types of p-n junction devices, bringing diamond closer to practical applications for future electronics. In this chapter, details of homoepitaxy growth and impurity doping in single-crystal diamond are summarized, especially in n-type diamond by phosphorus doping. Diamond growth and doping, electronic properties, electrical conductivity, contact metallization, and junction applications are described below.