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30 积分 2025-12-06 加入
Nanohardness and Young’s modulus studies of binary non-centrosymmetric III-V semiconductors (III: Ga, In; V: P, As, Sb)
2天前
待确认
Study on Surface State Control Technique of InSb Material Ultraprecision Machining
2天前
已完结
Comparison of nanoindentation results obtained with Berkovich and cube-corner indenters
4天前
已完结
Temperature effects on thermodynamic and mechanical properties of the InP, InAs and InSb compounds
2个月前
已完结
Insight into the mechanism of lattice damage in ground and polished InAs substrates
3个月前
已关闭
Hot carrier induced TDDB in HV MOS: Lifetime model and extrapolation to use conditions
3个月前
已完结