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10 积分 2023-02-27 加入
Interface states in semiconductor and their influence on Schottky barrier in β-Ga2O
1个月前
已完结
MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates
1个月前
已完结
Multiphysical field full‐process simulation of gallium oxide with EFG approach
2个月前
已完结
Defect dependence of electrical characteristics of β-Ga2O3 Schottky barrier diodes grown with hydride vapor phase epitaxy
3个月前
已完结
Binding energy referencing in X-ray photoelectron spectroscopy
3个月前
已完结
Band alignment and electronic structure of β-Ga2O3 (−201) grown on Si- and C-faces of 4H–SiC substrates
4个月前
已完结
MOCVD growth of β-Ga2O3 with fast growth rates (>4.3 μm/h), low controllable doping, and superior transport properties
4个月前
已完结
Oxygen diffusion in β-Ga2O3 single crystals at high temperatures
4个月前
已完结
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
4个月前
已完结
200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers
5个月前
已完结
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