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70 积分 2023-02-27 加入
Uniform Wafer-scale MOCVD homoepitaxy of β-Ga2O3 on 2-inch (010) substrates
28天前
已完结
MOCVD growth of β-Ga2O3 with fast growth rates (>4.3 μm/h), low controllable doping, and superior transport properties
30天前
已完结
Edge-Dependent Stacking Fault Upward Transformation in Pseudo-Symmetric (100) β-Ga₂O₃ HVPE Epitaxy: A Common Source of Hillocks
1个月前
已关闭
High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes
1个月前
已完结
High responsive ethylene glycol gas sensor based on CuO@Ga2O3 p-n hetero-junctions materials
1个月前
已完结
Uniformity improvement of thickness and net donor concentration in halide vapor phase epitaxial β-Ga2O3 wafers prepared on miscut angle substrates
2个月前
已完结
Uniformity improvement of thickness and net donor concentration in halide vapor phase epitaxial β-Ga2O3 wafers prepared on miscut angle substrates
3个月前
已完结
Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β -Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography
3个月前
已完结
Research Progress and Prospect of the Bulk Single Crystal Growth of β‐Ga2O3: from 1964 to 2024
3个月前
已完结
Association of composite biomarkers with imaging burden in cerebral small vessel disease
4个月前
已完结
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