Lv21
160 积分 2026-03-31 加入
Study on the interfaces between Si and SiGe in the epitaxial in-situ Boron-Doped SiGe/Si layers treated with H or Cl
4小时前
待确认
Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques
4小时前
已完结
A comparative study of SiO2 deposited by PECVD and thermal method as passivation for multicrystalline silicon solar cells
8天前
已完结
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
1个月前
已完结
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
1个月前
已完结
Very low temperature (450 °C) selective epitaxial growth of heavilyin situboron-doped SiGe layers
1个月前
已完结
Formation of Source/Drain Structures Using Nanosecond Laser Annealing for Multichannel GAA Mosfet Devices
2个月前
已关闭
Deactivation phenomena of highly B-doped SiGe epitaxial films subjected to nanosecond laser annealing followed by rapid thermal annealing
2个月前
已完结
(Invited) Activation and Deactivation in Ultra-Highly Doped n-Type Epitaxy for nMOS Applications
2个月前
已完结
(Invited) Cutting-Edge Epitaxial Processes for Sub 3 Nm Technology Nodes: Application to Nanosheet Stacks and Epitaxial Wrap-Around Contacts
2个月前
已完结
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