Lv3
210 积分 2026-03-31 加入
Elevated source drain devices using silicon selective epitaxial growth
3个月前
已完结
Triple boron doped silicon for selective epitaxial growth of 3D NAND flash memory
3个月前
已完结
Stress analysis and characterization of TEOS-based PECVD fabricated SiO2 solid films after thermal annealing
3个月前
已完结
Comparison of the effects of downstream H2- and O2-based plasmas on the removal of photoresist, silicon, and silicon nitride
3个月前
已完结
A methodology for mechanical stress and wafer warpage minimization during 3D NAND fabrication
3个月前
已完结
An effective solution to optimize the saddle-shape warpage in 3D IC applications by patterning laser treatment
3个月前
已完结
Study on the interfaces between Si and SiGe in the epitaxial in-situ Boron-Doped SiGe/Si layers treated with H or Cl
3个月前
已完结
Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques
3个月前
已完结
A comparative study of SiO2 deposited by PECVD and thermal method as passivation for multicrystalline silicon solar cells
4个月前
已完结
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
5个月前
已完结
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