Lv1
90 积分 2026-04-16 加入
Deformation Behavior and Fracture Strength of Single‐Crystal 4H‐SiC Determined by Microcantilever Bending Tests
15天前
已完结
Focused ion beam preparation of inclined planes in semiconductor materials
15天前
已关闭
Size effects on the fracture of microscale and nanoscale materials
18天前
已完结
Fracture strength analysis of single-crystalline silicon cantilevers processed by focused ion beam
24天前
已完结
Interfacial energy release rates of SiN/GaAs film/substrate systems determined using a cyclic loading dual-indentation method
1个月前
已完结
A direct method of determining complex depth profiles of residual stresses in thin films on a nanoscale
1个月前
已完结
Mechanical Reliability of SiCN – Ultra Low k Dielectrics in BEOL Interconnect Depending on Fracture Mode
1个月前
已关闭
Initiation and arrest of cracks from corners in multi-chip semiconductor devices
1个月前
已完结
Effects of location and size of Kirkendall voids on mechanical response of Cu/Sn solder joint under tension
1个月前
已完结
皖公网安备34019202002308
