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138 积分 2026-04-12 加入
Outperformance of Asymmetric 4H-SiC Superjunction Geometry Beyond the Optimal Limit of Symmetric Design
9天前
已完结
Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV
16天前
已完结
The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles
16天前
已完结
Characterization and analysis of high-quality 4H-SiC epitaxy suitable for the super-junction adopting “multiple epitaxy-channeling implantation” route
16天前
已完结
Design and Fabrication of 1 cm 2 Chip Size, 20 kV Rated SiC MOSFETs on 200 mm SiC Wafer
30天前
已完结
Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth
1个月前
已完结
4.5kV SiC Charge-Balanced MOSFETs with Ultra-Low On-Resistance
1个月前
已完结
Novel Equivalent Simulation Method and Experimental Zero Failure Verification of Optimized 650V SJ MOSFETs Under 100% Rated Voltage HTRB
1个月前
已完结
New generation 6.5 kV SiC power MOSFET
4个月前
已完结
4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate
4个月前
已完结
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