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138 积分 2026-04-12 加入
Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET
17天前
已完结
3.3 kV-Class 4H-SiC Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness
1个月前
已完结
Characterization of 4.5 kV Charge-Balanced SiC MOSFETs
1个月前
已完结
Double-implanted 4H-SiC superjunction UMOSFET without bipolar degradation
1个月前
已完结
High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability
1个月前
已完结
3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance
1个月前
已完结
4.15 kV/4.6 mΩ⋅cm² 4H-SiC Epi-Refilled Super-Junction Schottky Diode With Ring Assisted Super-Junction Termination Extension
1个月前
已完结
Design and Fabrication of 1.92 kV 4H-SiC Super-Junction SBD With Wide-Trench Termination
1个月前
已完结
Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance
1个月前
已完结
Performance transition from full- to semi-superjunction geometries in 4H-SiC
1个月前
已完结
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