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34 积分 2023-04-25 加入
Synthesis, Structure, and Molecular Orbital Studies of Yttrium, Erbium, and Lutetium Complexes Bearing η2-Pyrazolato Ligands: Development of a New Class of Precursors for Doping Semiconductors
2天前
已完结
A study on the influence of ligand variation on formamidinate complexes of yttrium: new precursors for atomic layer deposition of yttrium oxide
2天前
已完结
Atomic Layer Deposition of HfO2 Films Using Tetrakis(1-(N,N-dimethylamino)-2-propoxy)hafnium [Hf(dmap)4] for Advanced Gate Dielectrics Applications
6天前
已完结
Atomic Layer Deposition of HfO2 Films Using Tetrakis(1-(N,N-dimethylamino)-2-propoxy)hafnium [Hf(dmap)4] for Advanced Gate Dielectrics Applications
6天前
已完结
Atomic Layer Deposition of Hafnium–Zirconium-Oxide Films Using a Liquid Cocktail Precursor Containing Hf(dmap)4 and Zr(dmap)4 for Ferroelectric Devices
8天前
已完结
Enhanced physical and electrical properties of HfO2 deposited by atomic layer deposition using a novel precursor with improved thermal stability
8天前
已完结
Preferential CO oxidation over CuO CeO2 catalyst synthesized from MOF with nitrogen-containing ligand as precursor
8天前
已完结
Atomic layer deposition of Y2O3 as high-k dielectrics by using a heteroleptic yttrium precursor and water
8天前
已完结
Novel deuterated cyclopentadienyl zirconium/hafnium precursors for atomic layer deposition of high-performance ZrO2/HfO2 thin films
8天前
已完结
Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric
1个月前
已完结
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