Lv2
140 积分 2020-07-18 加入
An Analysis of UIS Failure Mechanism of 4H-SiC MOSFET in Transition Region
4天前
已完结
Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design
14天前
已完结
4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
2个月前
已完结
Novel High-Tolerance Termination With Resistive Field Plate for 600 V Super-Junction Vertical Double-Diffused MOSFET
2个月前
已完结
4H-SiC Trench-gate MOSFET with JTE termination
2个月前
已完结
Detailed Analysis on Determining Effective Dose for Various JTE-Based Edge Terminations Utilized on 4H-SiC Power Devices
2个月前
已完结
Design and Optimization of 650V/1200V Silicon Carbide MOSFET with Hybrid Junction Termination Extension (Hybrid-JTE)
2个月前
已完结
The Influence of Packaging on the High Voltage SiC MOSFET Termination
2个月前
已完结
Planar edge terminations for high voltage 4H-SiC power MOSFETs
2个月前
已完结
Reliability Study of Various Edge Terminations of Silicon Carbide Power Devices Using Simulation Methods
2个月前
已完结
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