Lv1
30 积分 2025-07-18 加入
Optimization of silicon etch rate in a CF4/Ar/O2 inductively coupled plasma
2个月前
已完结
Pressure and temperature stability boundaries of cubic SiC polymorphs: a first-principles investigation
2个月前
已完结
Techniques for Polytypic Transformations in Silicon Carbide
2个月前
已完结
Phase transformations, habit changes and crystal growth in SiC
2个月前
已完结
Growth and defect formation mechanism of CVD-prepared SiC coatings based on cross-scale simulation
6个月前
已完结
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
6个月前
已完结
Atomic insight into concurrent He, D, and T sputtering and near-surface implantation of 3C-SiC crystallographic surfaces
6个月前
已完结
Influence of steam flow rate on oxidation kinetics of silicon carbide at 1400–1600 °C
6个月前
已完结
The estimation of sputtering yields for SiC and Si
6个月前
已完结
Microstructure and high-temperature strength of silicon carbide with 2000 ppm yttria
6个月前
已完结
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