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10 积分 2025-07-18 加入
Growth and defect formation mechanism of CVD-prepared SiC coatings based on cross-scale simulation
1个月前
已完结
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
1个月前
已完结
Atomic insight into concurrent He, D, and T sputtering and near-surface implantation of 3C-SiC crystallographic surfaces
1个月前
已完结
Influence of steam flow rate on oxidation kinetics of silicon carbide at 1400–1600 °C
1个月前
已完结
The estimation of sputtering yields for SiC and Si
1个月前
已完结
Microstructure and high-temperature strength of silicon carbide with 2000 ppm yttria
1个月前
已完结
Electrical resistivity at the micron scale in a polycrystalline SiC ceramic
2个月前
已完结
Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices
2个月前
已完结
Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances
2个月前
已完结
Silicon Carbide MOSFETs: A Critical Review of Applications, Technological Advancements, and Future Perspectives
2个月前
已完结
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