Lv1
20 积分 2025-07-18 加入
Detection of Boron Segregation to Grain Boundaries in Silicon Carbide by Spatially Resolved Electron Energy‐Loss Spectroscopy
3个月前
已完结
Optimization of silicon etch rate in a CF4/Ar/O2 inductively coupled plasma
6个月前
已完结
Pressure and temperature stability boundaries of cubic SiC polymorphs: a first-principles investigation
6个月前
已完结
Techniques for Polytypic Transformations in Silicon Carbide
6个月前
已完结
Phase transformations, habit changes and crystal growth in SiC
6个月前
已完结
Growth and defect formation mechanism of CVD-prepared SiC coatings based on cross-scale simulation
10个月前
已完结
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
11个月前
已完结
Atomic insight into concurrent He, D, and T sputtering and near-surface implantation of 3C-SiC crystallographic surfaces
11个月前
已完结
Influence of steam flow rate on oxidation kinetics of silicon carbide at 1400–1600 °C
11个月前
已完结
The estimation of sputtering yields for SiC and Si
11个月前
已完结
皖公网安备34019202002308
