Lv4
508 积分 2026-04-17 加入
SiGe HBT integrated in a 22 nm FDSOI
12分钟前
待确认
Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates
2个月前
已完结
High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation
2个月前
已完结
Trapping threading dislocations in germanium trenches on silicon wafer
2个月前
已完结
Trapping threading dislocations in germanium trenches on silicon wafer
2个月前
已完结
A Trenched Ge-on-Si SPAD With Low Dark Current Utilizing Aspect Ratio Trapping Technology
2个月前
已完结
Publisher Correction: The future transistors
3个月前
已完结
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