Lv4
648 积分 2024-10-26 加入
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET
1个月前
已关闭
Matched Threshold Voltage of n-Si/p-SiGe Hybrid-Channel Gate-All-Around CMOS Transistors Using a Single LaFMD Dipole With the Same n-Type Metal Gate
2个月前
已关闭
Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration
2个月前
已完结
Improved Interface Quality and Stability of AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using N2-Annealed Atomic-Layer-Deposited SiNx Gate Dielectrics
2个月前
已完结
Work function tuning in TiAlN thin films by trace Al doping for CMOS-compatible metal gates
2个月前
已关闭
Suppression of Threshold Voltage Variation by TiN Surface Treatment for N-FinFETs With Very Thin Work Function Metal Layers
2个月前
已完结
The effective Work-Function of atomic layer deposited TaN thin film using TBTDET precursor and NH3 reactant gas
3个月前
已完结
Atomic layer deposited Mo2N thin films using Mo(CO)6 and NH3 plasma as a Cu diffusion barrier
3个月前
已关闭
Factors Effecting and Structural Engineering of Molybdenum Nitride‐Based Electrocatalyst for Overall Water Splitting: A Critical Review
4个月前
已完结
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