| 标题 |
Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3‐Based Dielectric for Further Scaling of Dynamic Random Access Memory |
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| 其它 |
期刊:Physica Status Solidi (a) 作者:S. Cha; C. An; S. Cho; Dong-gun Kim; D. Kwon; et al 出版日期:2019-07-22 |
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(2025-6-4)