Lv1
40 积分 2026-01-30 加入
High-Density Sensor Array Based on a-IGZO TFT for Pressure and Light Response
13天前
已完结
Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress
15天前
已完结
Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs
15天前
已完结
A High-Voltage/High-Speed Human-Body-Model ESD Simulator Using SiC MOSFET
22天前
已完结
Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System
22天前
已完结
Guest Editorial: The dawn of gallium oxide microelectronics
1个月前
已完结
Recent advancement in β-Ga2O3 MOSFETs: From material growth to device architectures for high-power electronics
1个月前
已完结
Defect Engineering at the Al2O3/(010)β-Ga2O3Interface via Surface Treatments and Forming Gas Post-Deposition Anneals
1个月前
已完结
Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
1个月前
已完结
Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts
2个月前
已完结
皖公网安备34019202002308
