Lv61
1890 积分 2023-09-05 加入
Impact of gate-electrode material on channel-carrier mobility of thin-film transistor with high-k gate dielectric
3小时前
待确认
Effect of Top-Gate Dielectric Deposition on the Performance of Indium Tin Oxide Transistors
3小时前
待确认
Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics
5小时前
待确认
Impact of Gate-Dielectric Annealing Temperature on Screening of Remote Phonon Scattering in InGaZnO Thin-Film Transistors
5小时前
待确认
Reduced screening of remote phonon scattering in thin-film transistors caused by gate-electrode/gate-dielectric interlayer
5小时前
已关闭
Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator
5小时前
待确认
Choice of metal as gate electrode of thin-film transistor with high-k gate dielectric
27天前
已完结
High-crystallinity and enhanced mobility in In2O3 thin-film transistors via metal-induced method
27天前
已完结
Ultraviolet Induced Effects on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Relatively Short Channel Lengths
27天前
已完结
Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors
27天前
已完结
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