Lv3
270 积分 2025-05-09 加入
Improved p-GaN/AlGaN/GaN HEMTs with magnetron sputtered AlN cap layer
5小时前
已完结
Al diffusion at AlN/Si interface and its suppression through substrate nitridation
12天前
已完结
Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices
21天前
已完结
Design of a High Temperature 2.37 GHz Voltage-Controlled Oscillator With GaN-on-SiC HEMTs
21天前
已完结
Strain behavior and dopant activation of heavily in-situ B-doped SiGe epitaxial films treated by nanosecond laser annealing
1个月前
已完结
Solid-phase epitaxial regrowth of phosphorus-doped silicon by nanosecond laser annealing
1个月前
已完结
High-quality AlN regrown on high-temperature-annealing templates with thermal cleaning
1个月前
已完结
Effective removal of Si contamination at the GaN regrowth interface through in-situ etching
1个月前
已完结
Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis
1个月前
已关闭
High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure
1个月前
已关闭
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