Lv2
160 积分 2025-05-09 加入
Improvement of Breakdown Voltage and ON-Resistance in Normally-OFF AlGaN/GaN HEMTs Using Etching-Free p-GaN Stripe Array Gate
10天前
已完结
Smart GaN platform: Performance & challenges
17天前
已完结
Epitaxial growth of 4H-SiC layers on 4H-SiC vicinal off-cut substrates for GaN/SiC hybrid devices
19天前
已完结
Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC
19天前
已完结
GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique
19天前
已完结
Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates
19天前
已完结
Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing
24天前
已完结
Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si
25天前
已完结
Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)
25天前
已完结
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems
25天前
已完结
皖公网安备34019202002308
