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20 积分 2022-08-12 加入
Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test
1个月前
已完结
Impact of P-type doping and channel length on the performance of 2D SiC MOSFET
4个月前
已完结
Development of high power SiC devices for rail traction power systems
5个月前
已完结
Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC
5个月前
已完结
Orientation Independent Growth of Uniform Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films on Silicon for High‐Density 3D Memory Applications
6个月前
已完结
Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery
7个月前
已完结
Comprehensive Analysis of an Isolation Area Obtained by Local Oxidation of Silicon Without Field Implant
8个月前
已完结
Effect of nitrogen introduced at the SiC/SiO2interface and SiC side on the electronic states by first-principles calculation
10个月前
已完结
Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices
1年前
已完结
Surface Orientated < 100 > , < 110 > , and < 111 > Silicon-based Double-Gate Tunnel-FET for Linearity and Analog/RF Performance Analysis
1年前
已完结
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