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118 积分 2022-10-07 加入
Innovative DRAM Cell Featuring a Vertical Junctionless Pillar Access Transistor With a High Work-Function Molybdenum Nitride Metal Gate for Enhanced Performance and Efficiency
1个月前
已完结
Selective ALD Mo Deposition in 10nm Contacts
3个月前
已完结
Electrical behavior of ALD-molybdenum films in the thin-film limit
3个月前
已完结
CMOS Past, Present and Future
3个月前
已完结
Effect of the H2/N2 Ratio on Molybdenum Nitride Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition: Applications for Next-Generation Interconnects
4个月前
已完结
Backside Power Distribution for Nanosheet Technologies Beyond 2nm
4个月前
已完结
Efficient Backside Power Delivery for High-Performance Computing Systems
4个月前
已完结
Backside Power Distribution for Nanosheet Technologies Beyond 2nm
4个月前
已关闭
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