Lv5
910 积分 2024-07-03 加入
An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process
27天前
已完结
An Ultra-Low Specific On-Resistance LDMOS With Segmented LOCOS In 0.18 μm BCD Process Platform
27天前
已完结
An Accuracy Scalable n-LDMOS Model for Drift Region
27天前
已完结
A Study of Ldmos With High Breakdown Voltage and Low On-Resistance in 22Nm Technology
27天前
已完结
The Effect of Shallow Trench Isolation and Sinker on the Performance of Dual-Gate LDMOS Device
27天前
已完结
Hot-Carrier-Induced Degradation and Optimization for Lateral DMOS With Split-STI-Structure in the Drift Region
27天前
已完结
High-Performance LDMOS with a Novel Stepped-Field Plate Optimized by Simulation
27天前
已完结
New LDMOS structure having partially counter doped region in STI edge area of drift region
27天前
已完结
Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors
27天前
已完结
The Effect of Layout Design on Hot Carrier Degradation in N-type STI-LDMOS
27天前
已完结
皖公网安备34019202002308
