Lv11
80 积分 2025-05-14 加入
Enhancement of positive bevel β-Ga2O3 trench MOS barrier Schottky diode by post-etching treatment
7分钟前
待确认
Design and optimizing of trench Schottky barrier-controlled β-Ga2O3 Schottky diode with low turn-on voltage and leakage current
29分钟前
已完结
Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates
10个月前
已完结
Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers
10个月前
已完结
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