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588 积分 2023-06-11 加入
Analysis on two breakdown failure mechanisms of silicon carbide MOSFET devices with abnormally increased leakage current at low voltage
2个月前
已完结
Research progress of single event effect and reinforcement technology of SiC power metal-oxide-semiconductor field-effect transistors
2个月前
已关闭
Impact of Heavy-Ion Flux on the Single-Event Leakage Current of SiC Power MOSFETs
2个月前
已关闭
Leakage Current Mechanisms in Silicon Carbide MOSFETs - A Review
2个月前
已完结
Analysis on two breakdown failure mechanisms of silicon carbide MOSFET devices with abnormally increased leakage current at low voltage
2个月前
已完结
Heavy-Ion-Induced Gate–Source Damage at High Drain Bias in SiC Power MOSFET
2个月前
已关闭
Wide-Bandgap Semiconductors for Radiation Detection: A Review
3个月前
已完结
Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors
3个月前
已完结
Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics
3个月前
已完结
A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments
3个月前
已完结
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