Lv1
40 积分 2024-12-01 加入
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
1个月前
已完结
Bias stability enhancement of metal/Al2O3/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer
4个月前
已关闭
Bias stability enhancement of metal/Al2O3/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer
4个月前
已关闭
Atomic layer deposition of Cu(i) oxide films using Cu(ii) bis(dimethylamino-2-propoxide) and water
7个月前
已完结
Tin titanate—the hunt for a new ferroelectric perovskite
7个月前
已完结
Solution-Cast Metal Oxide Thin Film Electrocatalysts for Oxygen Evolution
7个月前
已完结
Microstructure, mechanical and electrical properties of (AlCrTaTiZr)Nx high-entropy nitride films
8个月前
已完结
Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform
9个月前
已完结
Improving Optical Efficiency and Luminance of GaN-Based Micro-Light-Emitting Diodes for High-Resolution Displays via NH3 Plasma Pretreatment
9个月前
已完结
Interface and Border Traps Study in Si₃N₄/AlN/GaN MIS-HEMTs With In-Situ N₂ or H₂/N₂ Plasma Pretreatment
9个月前
已完结
皖公网安备34019202002308
