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36 积分 2020-08-21 加入
Dynamic Breakdown Voltage of GaN Power HEMTs
10小时前
已完结
Key technologies Supporting High Performance and Reliability of SiC VMOSFET
8天前
已完结
Failure Analysis of 1200 V Trench IGBTs Under Repetitive Overcurrent Turn-off
8天前
已完结
Implant spacer optimization for the improvement of power MOSFETs' unclamped inductive switching (UIS) and high temperature breakdown
10天前
已完结
Study on stress in trench structures during silicon IGBTs process-oxidation
29天前
已完结
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs
1个月前
已完结
Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices
1个月前
已关闭
Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process
1个月前
已完结
Suppression of Dynamic Resistance Degradation in 1200-V GaN-on-Sapphire E-Mode GaN HEMTs by Drain-Side Thin p-GaN Design
1个月前
已完结
Gate Current Peaks Due to CGD Overcharge in SiC MOSFETs Under Short-Circuit Test
1个月前
已完结
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