Lv12
26 积分 2020-08-21 加入
Distinct Breakdown Mechanisms Under DC and Pulsed Conditions in AlGaN/GaN HEMTs With Floating Substrate Termination
1小时前
已完结
3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology
1天前
已完结
1200V Bidirectional FS-IGBT (BFS-IGBT) with Superior Turn-Off Capability
1天前
已完结
B-TRAN™ Optimization and Performance Characterization
1天前
已完结
Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress
4天前
已完结
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses
4天前
已完结
A Warpage Prediction Model for Trench Field-Plate Power MOSFET in 300mm-Diameter Process
4天前
已完结
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses
4天前
已关闭
Impact of p-Gate Contact in GaN-HEMTs on Overvoltage Stress Failure
4天前
已完结
Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress
4天前
已关闭
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