Lv1
6 积分 2020-08-21 加入
Bi-Directional Operation and Active Err Reduction of 2nd Generation Back-Gate-Controlled IGBTs (BC-IGBTs)
1天前
已完结
T-type IGBT module with new voltage class authentic RB-IGBT for DC-1000V solar inverter application
1天前
已完结
High voltage device edge termination for wide temperature range plus humidity with surface charge control (SCC) technology
1天前
已完结
CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss
3天前
已完结
On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs
1个月前
已完结
E-Mode p-GaN Gate Punch-Through HEMT with Robust Non-Destructive Drain Breakdown
1个月前
已完结
Reducing Reverse Recovery Charge in Trench Power MOSFETs Using Platinum Traps Introduced by Implantation and PVD
1个月前
已完结
Carrier Stored Layer Density Effect Analysis of Radiated Noise at Turn-On Switching via Gabor Wavelet Transform
1个月前
已完结
Multi-terminal Ultra-thin 3D Nanoporous Silicon Capacitor Technology for High-Speed Circuits Decoupling
1个月前
已完结
Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy
2个月前
已完结