Lv1
60 积分 2026-06-05 加入
Investigation of the Anisotropy of 4H-SiC Materials in Nanoindentation and Scratch Experiments
1个月前
已完结
State-of-the-art and Prospectives of Ultra-precision Grinding Technology for Semiconductor Substrates
2个月前
已关闭
Piezocatalysis for Chemical–Mechanical Polishing of SiC: Dual Roles of t‐BaTiO3 as a Piezocatalyst and an Abrasive
2个月前
已完结
Atomic-level surface formation of large-size SiC substrates by chemical mechanical polishing: Interfacial chemistry and removal mechanism
2个月前
已关闭
Ab initio -based approach for the oxidation mechanisms at SiO2 /4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction
2个月前
已完结
Study on surface thermal oxidation of silicon carbide irradiated by pulsed laser using reactive molecular dynamics
2个月前
已完结
Effects of oxidizer concentration and abrasive type on interfacial bonding and material removal in 4H-SiC polishing processes
2个月前
已完结
Effect of abrasive morphology on material removal mechanism and surface integrity in SiC precision grinding via molecular dynamics simulations
2个月前
已完结
Hybrid laser cleaning characteristic of marine barnacles fouling attached on Al alloys
2个月前
已完结
皖公网安备34019202002308
