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310 积分 2022-09-14 加入
Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal
3个月前
已完结
Evaluation of Interface Trap Density in Advanced SOI MOSFETs
4个月前
已完结
Re-examination of the extraction of MOS interface-state density by C–V stretchout and conductance methods
4个月前
已完结
Characterization of Si-SiO2 interface traps in p-metal-oxide-semiconductor structures with thin oxides by conductance technique
4个月前
已完结
A simplified technique for measuring fast surface states
4个月前
已完结
Direct extraction of interface trap states from the low frequency gate C-V characteristics of MOS devices with ultrathin high-К gate dielectrics
4个月前
已完结
Energy distribution of interface traps in high-k gated MOSFETs
4个月前
已完结
Stress-Related Local Layout Effects in FinFET Technology and Device Design Sensitivity
11个月前
已完结
Single-defect phonons imaged by electron microscopy
1年前
已完结
Quantitative measurement of strain field in strained-channel-transistor arrays by scanning moiré fringe imaging
1年前
已完结
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