Lv5
950 积分 2023-11-03 加入
Investigation of Enhancement-Mode AlGaN/GaN MIS-HEMT with Recessed Gate Structure
4天前
已完结
Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
8天前
已完结
High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications
10天前
已完结
High RF Performance AlGaN/GaN HEMTs on 6-in Si Substrate for Low Voltage Applications
11天前
已完结
AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets
11天前
已完结
Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications
11天前
已完结
High RF Performance Enhancement-Mode Thin-Barrier AlGaN/GaN HEMTs on Si Substrate for Low-Voltage Applications
11天前
已完结
Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT
17天前
已完结
Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications
19天前
已完结
Strong Polarization AlN/GaN/Si Heterojunction MIS-HEMT for Mm-Wave Low-Voltage Terminal Applications
19天前
已完结
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