Lv11
60 积分 2026-02-24 加入
Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor
1小时前
待确认
AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application
1小时前
已完结
Preventing Corrosion-Related Failures in Electronic Assembly: A Multicase Study Analysis
3个月前
已完结
4.2 W/mm at 10 GHz in Silicon Delta-Doped AlN/GaN/AlN Pseudomorphic HEMTs With PECVD SiN Passivation
6个月前
已完结
GaN-on-Si HEMT for D-Band Power Amplification Demonstrating 0.67 W/mm at 10 V
6个月前
已完结
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