| 标题 |
Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor |
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| 其它 |
期刊:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 作者:Yang Dai; Leiyu Gao; Yukun Li; Jing Zuo; Yue Zhang; et al 出版日期:2024-10-11 |
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(2025-6-4)